370a st203c..c series 1 inverter grade thyristors hockey puk version bulletin i25176 rev. b 04/00 www.irf.com typical applications inverters choppers induction heating all types of force-commutated converters features metal case with ceramic insulator international standard case to-200ab (a-puk) all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance case style to-200ab (a-puk) i t(av) 370 a @ t hs 55 c i t(rms) 700 a @ t hs 25 c i tsm @ 50hz 5260 a @ 60hz 5510 a i 2 t@ 50hz 138 ka 2 s @ 60hz 126 ka 2 s v drm /v rrm 1000 to 1200 v t q range 20 to 30 s t j - 40 to 125 c parameters st203c..c units major ratings and characteristics
st203c..c series 2 bulletin i25176 rev. b 04/00 www.irf.com voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 10 1000 1100 12 1200 1300 st203c..c 40 electrical specifications voltage ratings frequency units 50hz 860 750 1340 1160 5620 5020 400hz 840 706 1400 1220 2940 2590 1000hz 700 580 1350 1170 1750 1520 a 2500hz 430 340 980 830 910 780 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 47 ? / 0.22f 47 ? / 0.22f 47 ? / 0.22f i tm 180 o el 180 o el 100 s i tm i tm current carrying capability v i t(av) max. average on-state current 370 (140) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 700 dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one half cycle, 5260 t = 10ms no voltage non-repetitive surge current 5510 a t = 8.3ms reapplied 4420 t = 10ms 100% v rrm 4630 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 138 t = 10ms no voltage initial t j = t j max 126 t = 8.3ms reapplied 98 t = 10ms 100% v rrm 89 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 1380 ka 2 s t = 0.1 to 10ms, no voltage reapplied parameter st203c..c units conditions on-state conduction ka 2 s
st203c..c series bulletin i25176 rev. b 04/00 www.irf.com 3 v tm max. peak on-state voltage 1.72 i tm = 600a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25 c, i t > 30a i l typical latching current 1000 t j = 25 c, v a = 12v, ra = 6 ?, i g = 1a parameter st203c..c units conditions on-state conduction 1.17 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 1.22 (i > x i t(av) ), t j = t j max. v 0.92 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.83 (i > x i t(av) ), t j = t j max. m ? ma di/dt max. non-repetitive rate of rise t j = t j max., v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25 c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 ? source t j = t j max, i tm = 300a, commutating di/dt = 20a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st203c..c units conditions 1000 a/s t d typical delay time 0.8 min max dv/dt maximum critical rate of rise of t j = t j max. linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st203c..c units conditions blocking 500 v/ s 40 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st203c..c units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25 c, v a = 12v, ra = 6 ? t j = t j max., rated v drm applied t q max. turn-off time 20 30 s wt j = t j max, f = 50hz, d% = 50
st203c..c series 4 bulletin i25176 rev. b 04/00 www.irf.com t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.17 dc operation single side cooled junction to heatsink 0.08 dc operation double side cooled r thc-hs max. thermal resistance, 0.033 dc operation single side cooled case to heatsink 0.017 dc operation double side cooled f mounting force, 10% 4900 n (500) (kg) wt approximate weight 50 g parameter st203c..c units conditions k/w thermal and mechanical specification c case style to - 200ab (a-puk) see outline table k/w ? r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc) single side double side single side double side 180 0.015 0.017 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 k/w t j = t j max. 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 sinusoidal conduction rectangular conduction conduction angle units conditions ordering information table 5 68 9 st 20 3 c 12 c h h 1 3 4 10 7 device code 12 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - c = puk case to-200ab (a-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet term. (gate and aux. cathode unsoldered leads) 1 = fast-on term. (gate and aux. cathode unsoldered leads) 2 = eyelet term. (gate and aux. cathode soldered leads) 3 = fast-on term. (gate and aux. cathode soldered leads) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) t q (s) * standard part number. all other types available only on request. dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 20 ck dk ek -- -- 25 cj dj ej fj * -- 30 ch dh eh fh hh 10
st203c..c series bulletin i25176 rev. b 04/00 www.irf.com 5 fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 40 50 60 70 80 90 100 110 120 130 0 50 100 150 200 250 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st203c..c series (single side cooled) r (dc) = 0.17 k/w thj-h s 20 30 40 50 60 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 400 dc 30 60 90 120 180 a ve ra g e o n -sta te c urre nt (a ) cond uction p eriod maxim um allowable heatsink tem perature ( c) st203c ..c series (single side co oled) r (d c) = 0.17 k/w thj-h s outline table dia. max. 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) 0.3 (0.01) min. 0.3 (0.01) min. 13.7 / 14.4 (0.54 / 0.57) 25 5 gate term. for 1.47 (0.06) dia. pin receptacle anode to gate creepage distance: 7.62 (0.30) min. strike distance: 7.12 (0.28) min. 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) min. deep 42 (1.65) max. case style to-200ab (a-puk) all dimensions in millimeters (inches) quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
st203c..c series 6 bulletin i25176 rev. b 04/00 www.irf.com fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 dc 30 60 90 120 180 a ve ra g e o n -sta te curre nt (a) conduction period maximum allowable heatsink temperature ( c) st 203c ..c se rie s (double side cooled) r (d c ) = 0.08 k/w thj -hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 30 60 90 120 18 0 average on-state current (a) conduction angle maxim um allowable heatsink tem perature ( c) st203c ..c series (d ouble side cooled) r (d c) = 0.0 8 k/w thj-hs 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 800 dc 180 120 90 60 30 rm s limit conduction period maximum average on-state power loss (w) average on-state current (a) st203c..c series t = 125 c j 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 400 450 180 120 90 60 30 rms limit conduction angle m axim um average o n-state pow er loss (w) a vera g e o n -sta te curre nt (a ) st2 03c ..c se rie s t = 125 c j 2000 2500 3000 3500 4000 4500 5000 1 10 100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) in it ia l t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st203c..c series at an y rated l oad con dition and w ith rated v applied following surge. rr m 2000 2500 3000 3500 4000 4500 5000 5500 0.01 0.1 1 pulse train duration (s) v ersus p ulse tra in d ura tion . co ntro l of conduction may not be maintained. peak half sine wave o n-state current (a) in it ia l t = 1 2 5 c n o v o lt a g e r e a p p l ie d rate d v re applied rrm j st2 03c ..c se rie s m a xim um n o n re p e titive surg e c urren t
st203c..c series bulletin i25176 rev. b 04/00 www.irf.com 7 fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recovered charge characteristics fig. 12 - reverse recovery current characteristics fig. 13 - frequency characteristics 100 1000 10000 11.522.533.544.55 t = 25 c j in stan taneous o n-state current (a) instantaneous on-state voltage (v) t = 125 c j st203c..c series 0.001 0.01 0.1 1 0 .00 1 0.0 1 0.1 1 10 s q ua re w a ve p ulse d uratio n (s) thj -hs transien t the rm al im pedan ce z (k /w ) st203 c..c series ste a d y sta te va lue r = 0.1 7 k/w ( s in g le s i d e c o o le d ) r = 0.0 8 k/w (d ouble side c ooled) (d c o peration ) th j- hs thj-h s 0 20 40 60 80 100 120 140 160 0 20406080100 m ax im um reve rse re c ove ry c urre nt - irr (a ) rate of fall of forw ard current - di/dt (a/s) i = 50 0 a 300 a 200 a 100 a 50 a st203c ..c series t = 125 c j tm 0 50 100 150 200 250 0 20406080100 i = 50 0 a 300 a 20 0 a 10 0 a 50 a rate of fall of on-state current - di/dt (a/s) maximu m r everse recovery charge - qrr (c) st2 03c ..c series t = 125 c j tm 1e1 1e2 1e3 1e4 50 hz 40 0 2500 100 pulse ba sew id th (s) 1000 1500 3000 200 500 5000 st20 3c ..c serie s sinusoidal pulse t = 55 c c snubb er circuit r = 4 7 o hm s c = 0.22 f v = 80% v s s d dr m tp 10 00 0 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 10 0 pulse ba se w id th (s) p ea k o n-sta te c urre nt (a ) 100 0 1500 3000 20 0 50 0 5000 sn ub b e r ci rc uit r = 4 7 o hm s c = 0.22 f v = 80% v s s d drm st203 c. .c se ries s inus o id a l p uls e t = 40 c c tp 10 00 0 1e4
st203c..c series 8 bulletin i25176 rev. b 04/00 www.irf.com fig. 14 - frequency characteristics fig. 15 - frequency characteristics 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 pulse b asew id th (s) peak on-state current (a) 10 00 1 500 30 00 200 50 0 5000 snubber circuit r = 4 7 ohm s c = 0 .22 f v = 8 0% v s s d drm st20 3c..c serie s s in uso id a l p ul se t = 40 c di/dt = 1 00a /s c tp 10 00 0 1e4 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 100 1000 1 500 20 0 500 snub ber circuit r = 22 ohms c = 0 .15 f v = 80% v s s d dr m pulse b a sew idth (s) p e a k o n -sta te c u rre n t (a ) 25 00 3000 5000 st0203c ..c se ries tra p ezo id a l p uls e t = 40 c di/d t = 50a/s c 10 00 0 tp 1e4 1e1 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e4 pulse b a sew id th (s) 20 joules per pulse 2 1 0.5 0.3 0.2 0.1 10 peak on-state c urren t (a) st203c ..c se ries s in uso id a l p uls e 4 tp 1e4 fig. 16 - maximum on-state energy power loss characteristics 1e 1 1e2 1e3 1e4 50 hz 40 0 2500 100 pulse ba sew id th (s) 1000 150 0 200 500 st2 03 c..c serie s tra p ezo id a l p uls e t = 5 5 c di/d t = 50a/s c snub ber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 3000 tp 5000 10 00 0 1e1 1e1 1e2 1e3 1e4 50 hz 40 0 2500 100 pulse b ase w id th (s) 100 0 1500 20 0 50 0 st203c..c series tra p ezo id a l p ul se t = 5 5 c di/d t = 10 0a/s c snubber circuit r = 4 7 o hm s c = 0 .22 f v = 8 0% v s s d drm 30 00 tp 5 000 10000 1e1 1e1 1e2 1e3 1e4 pulse b a sew id th (s) 20 joules per pulse 2 1 0.5 0.3 0.2 0.1 st2 03 c..c series rec ta ng ula r p ul s e di/dt = 50a/s 10 5 tp 3 1e1
st203c..c series bulletin i25176 rev. b 04/00 www.irf.com 9 fig. 17 - gate characteristics 0.1 1 10 100 0.0 01 0.0 1 0 .1 1 1 0 1 00 vgd ig d (b) (a) tj=25 c tj=1 25 c tj=-40 c (1) (2) instantaneous g ate c urrent (a) instanta neo us g a te v olta g e (v ) rectangular gate pulse a ) r e c o m m e n d e d lo a d li n e fo r b ) re c o m m e n d e d lo a d lin e f o r <=30% rate d di/dt : 10 v, 10ohm s rated di/dt : 20v , 10ohm s; tr<=1 s tr<=1 s (1) pgm = 1 0w , tp = 20 m s (2) pgm = 2 0w , tp = 10 m s (3) pgm = 4 0w , tp = 5m s (4) pgm = 6 0w, tp = 3.3m s (3 ) de vice : st203c ..c se rie s frequen cy lim ite d by pg(a v ) (4)
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